Analog/digital Gate Array
Product type Description Data sheet
AG3K01
  • 0.6 μm CMOS process.
  • 3000 NAND2 gates.
  • passive devices: resistors, capacitors, diodes.
  • standard I/O ports.
  • large-current I/O ports (12-mA source, 40-mA sink)
  • analog blocks:
    • 10-bit ADC.
    • RC oscillator.
    • crystal oscillator (24 MHz, max.)
    • OP amplifiers.
    • comparators.
    • filters.
  • operating voltage range: 2.7 ~ 5.5 volts.
  • operating temperature range: -20 to +75 °C.
  • storage temperature range: -40 to +125 °C.
  • ESD
    • exceeding 3K V(HBM EIA/JESD22-A114-B)
    • exceeding 200V (MM EIA/JESD22-A115-A)
  • Latch-up: 200 mA
 
AG6K01
  • 0.6 μm CMOS process.
  • 6000 NAND2 gates.
  • passive devices: resistors, capacitors, diodes.
  • standard I/O ports.
  • large-current I/O ports (12-mA source, 40-mA sink)
  • analog blocks:
    • 10-bit ADC.
    • RC oscillator.
    • crystal oscillator (24 MHz, max.)
    • OP amplifiers.
    • comparators.
    • filters.
  • operating voltage range: 2.7 ~ 5.5 volts.
  • operating temperature range: -20 to +75 °C.
  • storage temperature range: -40 to +125 °C.
  • ESD
    • exceeding 3K V(HBM EIA/JESD22-A114-B)
    • exceeding 200V (MM EIA/JESD22-A115-A)
  • Latch-up: 200 mA
 
 
AG10K01
  • 0.6 μm CMOS process.
  • 10K  NAND2 gates.
  • passive devices: resistors, capacitors, diodes.
  • standard I/O ports.
  • large-current I/O ports (12-mA source, 40-mA sink)
  • analog blocks:
    • 10-bit ADC.
    • RC oscillator.
    • crystal oscillator (24 MHz, max.)
    • OP amplifiers.
    • comparators.
    • filters.
  • operating voltage range: 2.7 ~ 5.5 volts.
  • operating temperature range: -20 to +75 °C.
  • storage temperature range: -40 to +125 °C.
  • ESD
    • exceeding 3K V(HBM EIA/JESD22-A114-B)
    • exceeding 200V (MM EIA/JESD22-A115-A)
  • Latch-up: 200 mA